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Research Overview: Imperfection-Immune Carbon Nanotube Circuits
One-dimensional nanomaterials such as semiconducting carbon nanotubes (CNTs) are promising candidates as extensions to Si CMOS. The objective of this work is to evaluate and benchmark the performance (defined broadly as speed/power/density) of carbon nanotube field-effect transistor (CNFET) based circuits, considering manufacturing limitations, defects such as misaligned and metallic tubes that we may have to live with, and process related CNT diameter variations. We aim at bringing together various design aspects and analysis of speed/power/density/defect-tolerance tradeoffs with realistic approximations of nanodevice characteristics and fabrication. The ultimate question that motivates this research is: given the opportunities fine pitch, excellent CNFET device characteristics; what can be gained at system-level compared to cutting-edge silicon CMOS?
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