Citation
N. Deb, R. D. Blanton. "Built-In Self Test of MEMS Accelerometers". Unpublished article, August, 2004.

Abstract
A built-in self-test technique that is applicable to symmetric microsystems such as the accelerometer is described. A combination of existing layout features and additional circuitry is used to make measurements from symmetrically-located points of the accelerometer sensor. In addition to the normal sense output, self-test outputs are used to detect the presence of device asymmetry that are caused by local, hard-to-detect defects. Simulation results for different accelerometer designs reveal that our self-test approach is able to distinguish misbehavior resulting from local defects and global manufacturing process variations. A mathematical model is developed to analyze the efficacy of the differential built-in self-test method used to characterize a wide range of local manufacturing variations affecting different regions of a device and/or wafer. Model predictions are validated by simulation. Specifically, it has been shown that by using a suitable modulation scheme, sensitivity to etch variation along a particular direction is improved by nearly 30%.

Electronic downloads

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Citation formats

• HTML

  N. Deb, R. D. Blanton. <a
  href="http://www.gigascale.org/pubs/552.html"><i>Built-In
  Self Test of MEMS Accelerometers</i></a>,
  Unpublished article,  August, 2004.

• Plain text

  N. Deb, R. D. Blanton. "Built-In Self Test of MEMS
  Accelerometers". Unpublished article,  August, 2004.

• BibTeX

  @unpublished{DebBlanton04_BuiltInSelfTestOfMEMSAccelerometers,
      author = {N. Deb and R. D. Blanton},
      title = {Built-In Self Test of MEMS Accelerometers},
      month = {August},
      year = {2004},
      abstract = {A built-in self-test technique that is applicable
                to symmetric microsystems such as the
                accelerometer is described. A combination of
                existing layout features and additional circuitry
                is used to make measurements from
                symmetrically-located points of the accelerometer
                sensor. In addition to the normal sense output,
                self-test outputs are used to detect the presence
                of device asymmetry that are caused by local,
                hard-to-detect defects. Simulation results for
                different accelerometer designs reveal that our
                self-test approach is able to distinguish
                misbehavior resulting from local defects and
                global manufacturing process variations. A
                mathematical model is developed to analyze the
                efficacy of the differential built-in self-test
                method used to characterize a wide range of local
                manufacturing variations affecting different
                regions of a device and/or wafer. Model
                predictions are validated by simulation.
                Specifically, it has been shown that by using a
                suitable modulation scheme, sensitivity to etch
                variation along a particular direction is improved
                by nearly 30%.},
      URL = {http://www.gigascale.org/pubs/552.html}
  }
  

Posted by Nilmoni Deb on 2 Sep 2004..

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