Citation
Bin Zhang, Michael Orshansky. "Modeling of NBTI-Induced PMOS Degradation under Arbitrary Dynamic Temperature Variation". International Symposium on Quality Electronic Design (ISQED), 774-779, March, 2008.

Abstract
Negative bias temperature instability (NBTI) is one of the primary limiters of reliability lifetime in nano-scale integrated circuits. NBTI manifests itself in a gradual increase in the magnitude of PMOS threshold voltage, resulting in the degradation of circuit performance over time. NBTI is highly sensitive to operating temperature, making the amount of degradation strongly dependent on the thermal history of the chip. In order to accurately predict the amount of threshold voltage increase, the precise temperature profile must be utilized. The existing models are based on the simplified analysis which assumes that the temperature takes up to two possible fixed values over time. These models are inaccurate when predicting the impact of continuously-changing temperature that spans a large range. Our experiments show that proposed model accounting for temperature variation provides a significantly tighter bound for the simulation than that from the model that ignores the temperature variation and assumes a constant (worst-case) temperature. In our experiment, the amount of degradation predicted by the proposed dynamic temperature model is on average 46% less conservative compared to the model based on the worst-case temperature.

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• HTML

  Bin Zhang, Michael Orshansky. <a
  href="http://www.gigascale.org/pubs/1300.html">Modeling
  of NBTI-Induced PMOS Degradation under Arbitrary Dynamic
  Temperature Variation</a>, International Symposium on
  Quality Electronic Design (ISQED), 774-779, March, 2008.

• Plain text

  Bin Zhang, Michael Orshansky. "Modeling of NBTI-Induced PMOS
  Degradation under Arbitrary Dynamic Temperature Variation".
  International Symposium on Quality Electronic Design
  (ISQED), 774-779, March, 2008.

• BibTeX

  @inproceedings{ZhangOrshansky08_ModelingOfNBTIInducedPMOSDegradationUnderArbitrary,
      author = {Bin Zhang and Michael Orshansky},
      title = {Modeling of NBTI-Induced PMOS Degradation under
                Arbitrary Dynamic Temperature Variation},
      booktitle = {International Symposium on Quality Electronic
                Design (ISQED)},
      pages = {774-779},
      month = {March},
      year = {2008},
      abstract = {Negative bias temperature instability (NBTI) is
                one of the primary limiters of reliability
                lifetime in nano-scale integrated circuits. NBTI
                manifests itself in a gradual increase in the
                magnitude of PMOS threshold voltage, resulting in
                the degradation of circuit performance over time.
                NBTI is highly sensitive to operating temperature,
                making the amount of degradation strongly
                dependent on the thermal history of the chip. In
                order to accurately predict the amount of
                threshold voltage increase, the precise
                temperature profile must be utilized. The existing
                models are based on the simplified analysis which
                assumes that the temperature takes up to two
                possible fixed values over time. These models are
                inaccurate when predicting the impact of
                continuously-changing temperature that spans a
                large range. Our experiments show that proposed
                model accounting for temperature variation
                provides a significantly tighter bound for the
                simulation than that from the model that ignores
                the temperature variation and assumes a constant
                (worst-case) temperature. In our experiment, the
                amount of degradation predicted by the proposed
                dynamic temperature model is on average 46% less
                conservative compared to the model based on the
                worst-case temperature. },
      URL = {http://www.gigascale.org/pubs/1300.html}
  }
  

Posted by Michael Orshansky on 6 Jun 2008..

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